Aol 1413 15iv
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AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = -30V ID = -38A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) ESD Protected!
D
Ultra SO-8TM Top View D
S
G
Bottom tab connected to drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B
TC=25°C ID IDM
-7 38
PD
TC=100°C
Junction and Storage Temperature Range
2.1
W
1.3
TJ, TSTG
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
W
19
PDSM
TA=70°C
Alpha & Omega Semiconductor, Ltd.
A
-70
IDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
V
-9
TA=25°C Power Dissipation A
±25 -27
TA=25°C TC=25°C
Power Dissipation B
Units V
-38
TC=100°C
Pulsed Drain Current C Continuous Drain Current A
Maximum -30
RθJA RθJC
Typ 18 49 2.9
°C
Max 25 60 4
Units °C/W °C/W °C/W
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AOL1413
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250uA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-70
±10
uA V
13.5
17
18.5
24
VGS=-5V, ID=-20A
28
36
VDS=-5V, ID=20A
27
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge
µA
-3.5
RDS(ON)
Output Capacitance
Units
-2.5
VGS=-10V, ID=-20A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
IS
Typ
A
-0.72
1760 VGS=0V, VDS=-15V, f=1MHz
S -1
V
-38
A
2200
pF
360
pF
255 VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-20A
mΩ
pF
6.4
8
30
38
Ω nC
11
nC
Qgs
Gate Source Charge
7
nC
Qgd
Gate Drain Charge
8
nC
tD(on)
Turn-On DelayTime
11.5
ns
tr
Turn-On Rise Time
8
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
24
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
16
VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω
35
ns
18.5
ns 30
ns nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the 's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev3:April, 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70
25
60
-10V
VDS=-5V
20
125°C
15
40
ID(A)
ID(A)
50
-5V
30 20
10 -4.5V
25°C
5
10
VGS=-4V
0
0 0
1
2 3 4 VDS (Volts) Figure 1: On-Region Characteristics
5
2
40.0
2.5
3
3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics
5
1.8 Normalized On-Resistance
ID=-20A
RDS(ON) (mΩ)
30.0 VGS=-5V 20.0
10.0 VGS=-10V
1.6
VGS=-10V
1.4
1.2
VGS=-5V
1
0.0 0
5
10
15
20
0.8
25
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
150
200
1.0E+02
50 ID=20A
1.0E+01
125°C
40 1.0E+00
125°C 30
IS (A)
RDS(ON) (mΩ)
100
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
TC=100°C TA=25°C
20
1.0E-01
25°C
1.0E-02 1.0E-03
-55 to 175
10
25°C
1.0E-04 1.0E-05
0 0
5
10
15
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
20
0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500
10 VDS=-15V ID=-20A
6 4 2
1500 1000
Coss
500
0 0
5
10
15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics
Crss
0
35
0
1000
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
100 TJ(Max)=175°C TC=25°C
100 10
100µs 1ms DC
1
10ms
0.01 0.01
60
40
TJ(Max)=175°C TC=25°C
0.1
80
10µs
RDS(ON) limited
Power (W)
ID (Amps)
Ciss
2000 Capacitance (pF)
VGS (Volts)
8
0.1
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
100
20 0.0001
0.001
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=4°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C TA=25°C PD
0.1
-55 to 175 Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
50
50
40
40 Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 20 10
30 20 10
0
0 0
25
50
75
100
125
150
175
0
25
TCASE (°C) Figure 13: Power De-rating (Note B)
50
75
100
125
150
175
TCASE (°C) Figure 14: Current De-rating (Note B)
100000
Power (W)
10000 1000 100 10 1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)
ZθJA Normalized Transient Thermal Resistance
10 1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 0.01 PD 0.001
Ton Single Pulse
0.0001 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
G ate C harge Test C ircuit & W aveform V gs
Qg
+
VDC
Q gs
V ds
Q gd
+
DUT
-
VDC
-10V
V gs Ig
C harge
Resistive Switching Test Circuit & W aveforms RL
Vds
t off
t on
Vgs VDC
-
DUT
Vgs Rg
td(on)
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s 2
L
E AR= 1/2 LIAR
Vds Vds
Id VDC
-
Vgs
Vgs
+
Rg
BVDSS Vdd
Id
I AR
DUT Vgs
Vgs
D iode R ecovery T est C ircuit & W aveform s Q rr = - Idt
V ds +
DUT
V ds -
Isd
Vgs
L
V gs Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt -I R M
Vdd
-V ds
www.aosmd.com
Features
The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected. -RoHS Compliant -Halogen and Antimony Free Green Device*
VDS (V) = -30V ID = -38A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) ESD Protected!
D
Ultra SO-8TM Top View D
S
G
Bottom tab connected to drain
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B
TC=25°C ID IDM
-7 38
PD
TC=100°C
Junction and Storage Temperature Range
2.1
W
1.3
TJ, TSTG
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
W
19
PDSM
TA=70°C
Alpha & Omega Semiconductor, Ltd.
A
-70
IDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B
V
-9
TA=25°C Power Dissipation A
±25 -27
TA=25°C TC=25°C
Power Dissipation B
Units V
-38
TC=100°C
Pulsed Drain Current C Continuous Drain Current A
Maximum -30
RθJA RθJC
Typ 18 49 2.9
°C
Max 25 60 4
Units °C/W °C/W °C/W
www.aosmd.com
AOL1413
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250uA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-70
±10
uA V
13.5
17
18.5
24
VGS=-5V, ID=-20A
28
36
VDS=-5V, ID=20A
27
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge
µA
-3.5
RDS(ON)
Output Capacitance
Units
-2.5
VGS=-10V, ID=-20A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
IS
Typ
A
-0.72
1760 VGS=0V, VDS=-15V, f=1MHz
S -1
V
-38
A
2200
pF
360
pF
255 VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-20A
mΩ
pF
6.4
8
30
38
Ω nC
11
nC
Qgs
Gate Source Charge
7
nC
Qgd
Gate Drain Charge
8
nC
tD(on)
Turn-On DelayTime
11.5
ns
tr
Turn-On Rise Time
8
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
24
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
16
VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω
35
ns
18.5
ns 30
ns nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on t<10s R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the 's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev3:April, 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70
25
60
-10V
VDS=-5V
20
125°C
15
40
ID(A)
ID(A)
50
-5V
30 20
10 -4.5V
25°C
5
10
VGS=-4V
0
0 0
1
2 3 4 VDS (Volts) Figure 1: On-Region Characteristics
5
2
40.0
2.5
3
3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics
5
1.8 Normalized On-Resistance
ID=-20A
RDS(ON) (mΩ)
30.0 VGS=-5V 20.0
10.0 VGS=-10V
1.6
VGS=-10V
1.4
1.2
VGS=-5V
1
0.0 0
5
10
15
20
0.8
25
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
150
200
1.0E+02
50 ID=20A
1.0E+01
125°C
40 1.0E+00
125°C 30
IS (A)
RDS(ON) (mΩ)
100
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
TC=100°C TA=25°C
20
1.0E-01
25°C
1.0E-02 1.0E-03
-55 to 175
10
25°C
1.0E-04 1.0E-05
0 0
5
10
15
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
20
0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
www.aosmd.com
AOL1413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500
10 VDS=-15V ID=-20A
6 4 2
1500 1000
Coss
500
0 0
5
10
15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics
Crss
0
35
0
1000
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
100 TJ(Max)=175°C TC=25°C
100 10
100µs 1ms DC
1
10ms
0.01 0.01
60
40
TJ(Max)=175°C TC=25°C
0.1
80
10µs
RDS(ON) limited
Power (W)
ID (Amps)
Ciss
2000 Capacitance (pF)
VGS (Volts)
8
0.1
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
100
20 0.0001
0.001
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
ZθJC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=4°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C TA=25°C PD
0.1
-55 to 175 Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
50
50
40
40 Current rating ID(A)
Power Dissipation (W)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 20 10
30 20 10
0
0 0
25
50
75
100
125
150
175
0
25
TCASE (°C) Figure 13: Power De-rating (Note B)
50
75
100
125
150
175
TCASE (°C) Figure 14: Current De-rating (Note B)
100000
Power (W)
10000 1000 100 10 1 0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note H)
ZθJA Normalized Transient Thermal Resistance
10 1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 0.01 PD 0.001
Ton Single Pulse
0.0001 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1413
G ate C harge Test C ircuit & W aveform V gs
Qg
+
VDC
Q gs
V ds
Q gd
+
DUT
-
VDC
-10V
V gs Ig
C harge
Resistive Switching Test Circuit & W aveforms RL
Vds
t off
t on
Vgs VDC
-
DUT
Vgs Rg
td(on)
t d(off)
tr
tf
90%
Vdd
+
Vgs
10%
Vds
Unclam ped Inductive Switching (UIS) Test Circuit & W aveform s 2
L
E AR= 1/2 LIAR
Vds Vds
Id VDC
-
Vgs
Vgs
+
Rg
BVDSS Vdd
Id
I AR
DUT Vgs
Vgs
D iode R ecovery T est C ircuit & W aveform s Q rr = - Idt
V ds +
DUT
V ds -
Isd
Vgs
L
V gs Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt -I R M
Vdd
-V ds
www.aosmd.com
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