C358c Dual Opamp 60344t

DATA SHEET

BIPOLAR ANATEGRATED CIRCUIT

µPC358 LOW POWER DUAL OPERATIONAL AMPLIFIERS

DESCRIPTION

FEATURES

The µPC358 is a dual operational amplifier which is

• Internally frequency compensation

designed to operate from a single power supply over a

• Wide output voltage swing V– to V+ –1.5 V

wide range of voltages. Operation from split power

• Common mode input voltage range includes V–

supplies is also possible and the power supply current

• Wide supply voltage range

drain is very low. Further advantage, the input common-

3 V to 30 V (Single)

mode voltage range includes ground in the linear mode.

±1.5 V to ±15 V (Split) • Output short circuit protection

EQUIVALENT CIRCUIT (1/2 Circuit)

6 µA

PIN CONFIGURATION (Marking Side)

OUT1

Q5 Q2 II

Q4

CC

Q11 Q10

V+

7

OUT2

– +

II1

Q7

2 2

+ –

OUT IN

8 1

RSC

Q8

1

Q6

Q3

Q1

µ PC358C, 358G2

V+

100 µ A

6 µA

Q13

IN1

3

6

II2

V–

4

5

IN2

Q12 50 µ A

Q9

µ PC358HA V–

6

7

8

9 +

II1

5

V

4

II2

3

OUT2

2

IN1 V– IN2

V

+

1

2 + –

OUT1

1 – +

ORDERING INFORMATION Part Number

Package

µPC358C

8-pin plastic DIP (300 mil)

µPC358G2

8-pin plastic SOP (225 mil)

µPC358HA

9-pin slim SIP

The information in this document is subject to change without notice. Document No. G11765EJ4V0DS00 (4th edition) (Previous No. IC-1284) Date Published May 1997 N Printed in Japan

The mark

shows major revised points.

©

1997

µPC358 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Voltage between

V+

and

Symbol

V–

V+

Note 1

–0.3 to +32

V

±32

V

VI

V––0.3 to V–+32

V

Note 3

VO

V––0.3

V

C Package

Note 4

PT

G2 Package HA Package

Input Voltage

Note 2

Output Voltage Power Dissipation

Unit

VID

Differential Input Voltage

Output Short Circuit Duration

–

Ratings

V–

to

V++0.3

350

mW

Note 5

440

mW

Note 4

350

mW

Note 6

Indefinite

s

Operating Ambient Temperature

TA

–20 to +80

°C

Storage Temperature

Tstg

–55 to +125

°C

Notes 1. Reverse connection of supply voltage can cause destruction. 2. The input voltage should be allowed to input without damage or destruction independent of the magnitude of V+. Either input signal should not be allowed to go negative by more than 0.3 V. The normal operation will establish when the both inputs are within the Common Mode Input Voltage Range of electrical characteristics. 3. This specification is the voltage which should be allowed to supply to the output terminal from external without damage or destructive. Even during the transition period of supply voltage, power on/off etc., this specification should be kept. The output voltage of normal operation will be the Output Voltage Swing of electrical characteristics. 4. Thermal derating factor is –5.0 mW/°C when operating ambient temperature is higher than 55 °C. 5. Thermal derating factor is –4.4 mW/°C when operating ambient temperature is higher than 25 °C. 6. Pay careful attention to the total power dissipation not to exceed the absolute maximum ratings, Note 4 and Note 5.

RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (Split) Supply Voltage

(V–

= GND)

Symbol

MIN.

V± V+

TYP.

MAX.

Unit

±1.5

±15

V

+3

+30

V

ELECTRICAL CHARACTERISTICS (TA = 25 °C, V+ = +5 V, V– = GND) Parameter

Symbol

MIN.

MAX.

Unit

VIO

±2

±7

mV

Input Offset Current

IIO

±5

±50

nA

IB

45

250

nA

Note 7

Large Signal Voltage Gain Supply Current

RS = 0 Ω

TYP.

Input Offset Voltage

Input Bias Current

AV

RL ≥ 2 kΩ

ICC

RL = ∞, IO = 0 A, Both Amplifiers

25

100 0.7

Common Mode Rejection Ratio

CMR

65

70

Supply Voltage Rejection Ratio

SVR

65

100

Output Voltage Swing Common Mode Input Voltage Range Output Current (SOURCE) Output Current (SINK)

Channel Separation

Note 7.

2

Conditions

VO

RL = 2 kΩ (Connect to GND)

VICM IO SOURCE IO SINK

VIN+

= +1 V,

VIN–

V/mA 1.2

mA dB dB

0

V+

–1.5

V

0

V+

–1.5

V

=0V

20

40

mA

VIN– = +1 V, VIN+ = 0 V

10

20

mA

VIN– = +1 V, VIN+ = 0 V, VO = 200 mV

12

50

µA

120

dB

f = 1 kHz to 20 kHz

Input bias currents flow out from IC. Because each currents are base current of PNP-transistor on input stage.

µPC358 TYPICAL PERFORMANCE CHARACTERISTICS (TA = 25 °C, TYP.)

SUPPLY CURRENT

POWER DISSIPATION 4

500

µ PC358G2

ICC - Supply Current - mA

PT - Total Power Dissipation - mW

600

400 300

µPC358C, 358HA

200 100

V+ A ICC

3 – + 2

1

TA = 0 to 70 °C TA = –20 °C 0

0 20 40 60 80 100 TA - Operating Ambient Temperature - °C

10 20 30 40 V+ - Supply Voltage - V (V– = GND)

INPUT OFFSET VOLTAGE

INPUT OFFSET VOLTAGE 3

5

+ V =5V

2 TA = 25 ˚C

1

0

0

VIO - Input Offset Voltage - mV

VIO - Input Offset Voltage - mV

4 3 2 1 0 –1 –2 –3 –4 –50 0 50 100 TA - Operating Ambient Temperature - ˚C

10 20 30 40 – V - Supply Voltage - V (V = GND) +

INPUT BIAS CURRENT

INPUT BIAS CURRENT 100

75

50

T A = 25 °C

25

0

10 20 30 40 V+ - Supply Voltage - V (V– = GND)

IB - Input Bias Current - nA

IB - Input Bias Current - nA

100

80

V+ = +15 V V– = GND

60

40 20 0 –50 0 50 100 TA - Operating Ambient Temperature - ˚C

3

µPC358

OPEN LOOP FREQUENCY RESPONSE 140 10 MΩ

– +

60

Aυ - Open Loop Voltage Gain - dB

IO SHORT - Output Short Circuit Current - mA

OUTPUT SHORT CIRCUIT CURRENT 70

IO SHORT

50

40

30 –20

0 20 60 40 TA - Ambient Temperature - ˚C

120

+

60 V+ = 30 V 40

V+ = 10 to 15 V

20 1

VO - Output Voltage Swing -Vp-p

AV - Open Loop Voltage Gain - dB

20 RL = 20 kΩ

120 RL = 2 kΩ 80

40

15

VIN

+7 V

+

VO 2 kΩ

5

3 5 10 k 30 50 100 k 300 500 1 M f - Frequency - Hz

VOLTAGE FOLLOWER PULSE RESPONSE

COMMON MODE REJECTION RATIO 120 VIN VO Input Voltage - V Output Voltage - V

4

100 80 60 40 20 0 100

+15 V –

10

0 1k

10 20 30 40 V - Supply Voltage - V (V– = GND)

100 kΩ 1 kΩ

+

CMR - Common Mode Rejection Ratio - dB

10 100 1 k 10 k 100 k 1 M 10 M f - Frequency - Hz

LARGE SIGNAL FREQUENCY RESPONSE

160

0

VO

– V+/2

80

OPEN LOOP VOLTAGE GAIN

4

V+

VIN

100

0

80

0.1 µF

1k 10 k 100 k f - Frequency - Hz

1M

RL ≥ 2 kΩ + V = 15 V

3 2 1 0 3 2 1 0

20

40 t - Time - µs

60

80

µPC358

SLEW RATE SR–

0.3 SR - Slew Rate - V/µ s

SR+ 0.2

0.1 V± = ±15 V VO = ±10 V 0 0 50 100 –50 TA - Operating Ambient Temperature - ˚C

OUTPUT SINK CURRENT LIMIT 100

VO - Output Voltage - V

50 30 20 10 5 3 2 1 0.5 0.3 0.2

V+ V+/2

0.1 0.05 0.03 0.02 0.01 0.01

– +

0.03 0.05

0.1

0.3 0.5

1

2

3

5

V+ = +15 V IO SINK VO

10

20 30

50

100

10

20 30

50

100

IO SINK - Output Sink Current - mA

OUTPUT SOURCE CURRENT LIMIT 5

V+ = +15 V

∆VO - Output Voltage to V+ - V

V+ 4 V+/2 3

∆VO

+ –

IO SOURCE

2

1

0 0.01

0.03 0.05

0.1

0.3 0.5

1

2

3

5

IO SOURSE - Output Source Current - mA

5

µPC358 PACKAGE DRAWINGS 8 PIN PLASTIC DIP (300 mil) 8

5

1

4 A

K

I

L

P

J

C

H G

B

M

R

F D

N

M

NOTES 1) Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

ITEM

MILLIMETERS

INCHES

A B

10.16 MAX. 1.27 MAX.

0.400 MAX. 0.050 MAX.

C

2.54 (T.P.)

0.100 (T.P.)

D

0.50±0.10

0.020 +0.004 –0.005

F

1.4 MIN.

0.055 MIN.

G H

3.2±0.3 0.51 MIN.

0.126±0.012 0.020 MIN.

I J

4.31 MAX. 5.08 MAX.

0.170 MAX. 0.200 MAX.

K

7.62 (T.P.)

0.300 (T.P.)

L

6.4

0.252

M

0.25 +0.10 –0.05

0.010 +0.004 –0.003

N

0.25

0.01

P

0.9 MIN.

0.035 MIN.

R

0~15°

0~15° P8C-100-300B,C-1

6

µPC358 8 PIN PLASTIC SOP (225 mil) 8

5

P

detail of lead end

4

1 A

H J

E

K

F

G

I

B

L N

C D

M

M

NOTE Each lead centerline is located within 0.12 mm (0.005 inch) of its true position (T.P.) at maximum material condition.

ITEM

MILLIMETERS

INCHES

A

5.37 MAX.

0.212 MAX.

B

0.78 MAX.

0.031 MAX.

C

1.27 (T.P.)

0.050 (T.P.)

D

0.40 +0.10 –0.05

0.016 +0.004 –0.003

E

0.1±0.1

0.004±0.004

F

1.8 MAX.

0.071 MAX.

G

1.49

0.059

H

6.5±0.3

0.256±0.012

I

4.4

0.173

J

1.1

0.043

K

0.15 +0.10 –0.05

0.006 +0.004 –0.002

L

0.6±0.2

0.024 +0.008 –0.009

M

0.12

0.005

N

0.10

0.004

P

3° +7° –3°

3° +7° –3° S8GM-50-225B-4

7

µPC358 9 PIN PLASTIC SLIM SIP A

N

M 1

9

Y C

F

Q

K

V

H G

M

J

U

Z

NOTE Each lead centerline is located within 0.25 mm (0.01 inch) of its true position (T.P.) at maximum material condition.

8

ITEM

MILLIMETERS

INCHES

A

22.86 MAX.

0.900 MAX.

C

1.1 MIN.

0.043 MIN.

F

0.5±0.1

0.02 +0.004 –0.005

G

0.25

0.010

H

2.54

0.100

J

1.27 MAX.

0.050 MAX.

K

0.51 MIN.

0.020 MIN.

M

5.08 MAX.

0.200 MAX.

N

2.8±0.2

0.11+0.009 –0.008

Q

5.75 MAX.

0.227 MAX.

U

1.5 MAX.

0.059 MAX.

V

0.25 +0.10 –0.05

0.01+0.004 –0.003

Y

3.2±0.5

0.126±0.02

Z

1.1 MIN.

0.043 MIN. P9HA-254B-1

µPC358 RECOMMENDED SOLDERING CONDITIONS When soldering these products, it is highly recommended to observe the conditions as shown below. If other soldering processes are used, or if the soldering is performed under different conditions, please make sure to consult with our sales offices. For more details, refer to our document “SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL” (C10535E). Type of Surface Mount Device

µPC358G2: 8-pin plastic SOP (225 mil) Process

Conditions

Symbol

Peak temperature: 230 °C or below (Package surface temperature), Reflow time: 30 seconds or less (at 210 °C or higher), Maximum number of reflow processes: 1 time.

IR30-00-1

Vapor phase soldering

Peak temperature: 215 °C or below (Package surface temperature), Reflow time: 40 seconds or less (at 200 °C or higher), Maximum number of reflow processes: 1 time.

VP15-00-1

Wave soldering

Solder temperature: 260 °C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120 °C or below (Package surface temperature).

WS60-00-1

Partial heating method

Pin temperature: 300 °C or below, Heat time: 3 seconds or less (Per each side of the device).

Infrared ray reflow

–

Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Types of Through-hole Device

µPC358C: 8-pin plastic DIP (300 mil) µPC358HA: 9-pin slim SIP Process Wave soldering (only to leads) Partial heating method

Conditions Solder temperature: 260 °C or below, Flow time: 10 seconds or less. Pin temperature: 300 °C or below, Heat time: 3 seconds or less (per each lead).

Caution For through-hole device, the wave soldering process must be applied only to leads, and make sure that the package body does not get jet soldered.

9

µPC358 REFERENCE DOCUMENTS QUALITY GRADES ON NEC SEMICONDUCTOR DEVICES

C11531E

SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL

C10535E

IC PACKAGE MANUAL

C10943X

GUIDE TO QUALITY ASSUARANCE FOR SEMICONDUCTOR DEVICES

MEI-1202

SEMICONDUCTORS SELECTION GUIDE

X10679E

NEC SEMICONDUCTOR DEVICE RELIABILITY/

IEI-1212

QUALITY CONTROL SYSTEM - STANDARD LINEAR IC

10

µPC358 [MEMO]

11

µPC358 [MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life ) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life systems or medical equipment for life , etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5

2