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FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features
General Description
„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
This
„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Semiconductor’s advanced PowerTrench® process that has
„ Extended VGSS range (-25V) for battery applications
been especially tailored to minimize the on-state resistance.
„ HBM ESD protection level of ±3.8KV typical (note 3)
This device is well suited for Power Management and load
„ High performance trench technology for extremely low rDS(on)
switching applications common in Notebook Computers and
„ High power and current handling capability
Portable Battery Packs.
P-Channel
MOSFET
is
produced
using
Fairchild
„ Termination is Lead-free and RoHS compliant
D D D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
G S S
Pin 1
S
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage Drain Current -Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
Ratings -30
Units V
±25
V
-8.8 -50
Power Dissipation
TA = 25°C
(Note 1a)
2.5
Power Dissipation
TA = 25°C
(Note 1b)
1.0
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 4)
A W
24
mJ
-55 to +150
°C
Thermal Characteristics RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
25 (Note 1a)
50
°C/W
Package Marking and Ordering Information Device Marking FDS4435BZ
Device FDS4435BZ
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
Package SO-8
1
Reel Size 13’’
Tape Width 12mm
Quantity 2500units
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
April 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
'BVDSS 'TJ
Breakdown Voltage Temperature Coefficient
-30
V
ID = -250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
PA
-3
V
mV/°C
-21
On Characteristics VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
'VGS(th) 'TJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = -250PA, referenced to 25°C
6
VGS = -10V, ID = -8.8A
16
20
rDS(on)
Static Drain to Source On Resistance
VGS = -4.5V, ID = -6.7A
26
35
VGS = -10V, ID = -8.8A, TJ = 125°C
22
28
VDS = -5V, ID = -8.8A
24
gFS
Forward Transconductance
-1
-2.1
mV/°C
m: S
Dynamic Characteristics Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz
1385
1845
275
365
pF pF
230
345
pF :
4.5
Switching Characteristics td(on)
Turn-On Delay Time
tr
Rise Time
VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6:
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
Drain-Source Diode Characteristics VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -8.8A
(Note 2)
IF = -8.8A, di/dt = 100A/Ps
-0.9
-1.2
V
29
44
ns
23
35
nC
NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the 's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
2
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
50 40
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V VGS = -5V VGS = -4.5V
30 VGS = -4V
20
VGS = -3.5V
10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
0 0
1
2
3
3.0 VGS = -4.5V
2.5 VGS = -4V
1.5 VGS = -10V
1.0 0.5 0
4
10
20
30
40
50
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.6
60 ID = -8.8A VGS = -10V
1.2 1.0 0.8 0.6 -75
-50
-25
PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
ID = -8.8A
rDS(on), DRAIN TO
1.4
0
25
50
75
SOURCE ON-RESISTANCE (m:)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = -5V
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
50 40 TJ = 125oC
30 20
TJ = 25oC
10
100 125 150
2
o
TJ, JUNCTION TEMPERATURE ( C)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
Figure 4. On-Resistance vs Gate to Source Voltage
50
100 -IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
VGS = -3.5V
3.5
40 VDS = -5V
30 20
TJ = 150oC
10 TJ = 25oC
TJ =-55oC
0 1
2
3
4
1 0.1
TJ = 25oC
TJ = 150oC
0.01
TJ = -55oC
0.001
0.0001 0.0
5
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
VGS = 0V
10
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
4000 ID = -8.8A
Ciss
8 CAPACITANCE (pF)
VDD = -10V
6 VDD = -15V
VDD = -20V
4 2
1000 Coss
Crss f = 1MHz VGS = 0V
0 0
5
10
15
20
25
100 0.1
30
1
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage -4
10 -Ig, GATE LEAKAGE CURRENT(A)
-IAS, AVALANCHE CURRENT(A)
20
10
TJ = 25oC TJ = 125oC
VDS = 0V -5
10
TJ = 125oC -6
10
-7
10
TJ = 25oC -8
10
-9
1 0.01
0.1
1
10
10
30
0
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Gate Leakage Current vs Gate to Source Voltage 100
10 8
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
30
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10V
6 VGS = -4.5V
4 2
100us
10
1ms 10ms
1 THIS AREA IS LIMITED BY rDS(on)
0.1
100ms SINGLE PULSE TJ = MAX RATED
1s 10s DC
o
RTJA = 125 C/W
o
TA = 25oC
RTJA = 50 C/W
0.01 0.1
0 25
50
75
100
125
150
o
TA, AMBIENT TEMPERATURE ( C)
Figure 11. Maximum Continuous Drain Current vs Ambient Temperature
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
1
10
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe Operating Area
4
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
1000 VGS = -10 V
SINGLE PULSE o
RTJA = 125 C/W o
TA = 25 C
100
10
1 0.5 -4 10
-3
-2
10
-1
10
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation 2
NORMALIZED THERMAL IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2
SINGLE PULSE
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
0.001 -4 10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
5
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE OF FAIRCHILD’S WORLDWIDE AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the .
2.
A critical component in any component of a life , device, or system whose failure to perform can be reasonably expected to cause the failure of the life device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales . Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
TRADEMARKS The following includes ed and uned trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ PowerTrench® F-PFS™ The Power Franchise® PowerXS™ Build it Now™ FRFET® ® SM Global Power Resource Programmable Active Droop™ CorePLUS™ ® Green FPS™ QFET CorePOWER™ TinyBoost™ QS™ Green FPS™ e-Series™ CROSSVOLT™ TinyBuck™ Quiet Series™ Gmax™ CTL™ TinyLogic® RapidConfigure™ GTO™ Current Transfer Logic™ TINYOPTO™ IntelliMAX™ EcoSPARK® TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® PSerDes™ STEALTH™ MillerDrive™ ® Fairchild SuperFET™ MotionMax™ ® Fairchild Semiconductor SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 UHC® OPTOLOGIC® ® FACT OPTOPLANAR® Ultra FRFET™ SuperSOT™-8 ® ® FAST UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ ® FlashWriter * XS™ ®* Power-SPM™ FPS™
General Description
„ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
This
„ Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
Semiconductor’s advanced PowerTrench® process that has
„ Extended VGSS range (-25V) for battery applications
been especially tailored to minimize the on-state resistance.
„ HBM ESD protection level of ±3.8KV typical (note 3)
This device is well suited for Power Management and load
„ High performance trench technology for extremely low rDS(on)
switching applications common in Notebook Computers and
„ High power and current handling capability
Portable Battery Packs.
P-Channel
MOSFET
is
produced
using
Fairchild
„ Termination is Lead-free and RoHS compliant
D D D
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
D
G S S
Pin 1
S
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage Drain Current -Continuous
ID
TA = 25°C
(Note 1a)
-Pulsed
PD
Ratings -30
Units V
±25
V
-8.8 -50
Power Dissipation
TA = 25°C
(Note 1a)
2.5
Power Dissipation
TA = 25°C
(Note 1b)
1.0
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 4)
A W
24
mJ
-55 to +150
°C
Thermal Characteristics RTJC
Thermal Resistance, Junction to Case
RTJA
Thermal Resistance, Junction to Ambient
25 (Note 1a)
50
°C/W
Package Marking and Ordering Information Device Marking FDS4435BZ
Device FDS4435BZ
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
Package SO-8
1
Reel Size 13’’
Tape Width 12mm
Quantity 2500units
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
April 2009
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics BVDSS
Drain to Source Breakdown Voltage
ID = -250PA, VGS = 0V
'BVDSS 'TJ
Breakdown Voltage Temperature Coefficient
-30
V
ID = -250PA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = -24V, VGS = 0V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±25V, VDS = 0V
±10
PA
-3
V
mV/°C
-21
On Characteristics VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250PA
'VGS(th) 'TJ
Gate to Source Threshold Voltage Temperature Coefficient
ID = -250PA, referenced to 25°C
6
VGS = -10V, ID = -8.8A
16
20
rDS(on)
Static Drain to Source On Resistance
VGS = -4.5V, ID = -6.7A
26
35
VGS = -10V, ID = -8.8A, TJ = 125°C
22
28
VDS = -5V, ID = -8.8A
24
gFS
Forward Transconductance
-1
-2.1
mV/°C
m: S
Dynamic Characteristics Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -15V, VGS = 0V, f = 1MHz f = 1MHz
1385
1845
275
365
pF pF
230
345
pF :
4.5
Switching Characteristics td(on)
Turn-On Delay Time
tr
Rise Time
VDD = -15V, ID = -8.8A, VGS = -10V, RGEN = 6:
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -15V, ID = -8.8A
10
20
ns
6
12
ns
30
48
ns
12
22
ns
28
40
nC
16
23
nC
5.2
nC
7.4
nC
Drain-Source Diode Characteristics VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -8.8A
(Note 2)
IF = -8.8A, di/dt = 100A/Ps
-0.9
-1.2
V
29
44
ns
23
35
nC
NOTES: 1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by the 's board design. a. 50°C/W when mounted on a 1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. 4. Starting TJ = 25°C, L = 1mH, IAS = -7A, VDD = -30V, VGS = -10V
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
2
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
50 40
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V VGS = -5V VGS = -4.5V
30 VGS = -4V
20
VGS = -3.5V
10 PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
0 0
1
2
3
3.0 VGS = -4.5V
2.5 VGS = -4V
1.5 VGS = -10V
1.0 0.5 0
4
10
20
30
40
50
-ID, DRAIN CURRENT(A)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage
1.6
60 ID = -8.8A VGS = -10V
1.2 1.0 0.8 0.6 -75
-50
-25
PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
ID = -8.8A
rDS(on), DRAIN TO
1.4
0
25
50
75
SOURCE ON-RESISTANCE (m:)
NORMALIZED DRAIN TO SOURCE ON-RESISTANCE
VGS = -5V
2.0
-VDS, DRAIN TO SOURCE VOLTAGE (V)
50 40 TJ = 125oC
30 20
TJ = 25oC
10
100 125 150
2
o
TJ, JUNCTION TEMPERATURE ( C)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance vs Junction Temperature
Figure 4. On-Resistance vs Gate to Source Voltage
50
100 -IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps DUTY CYCLE = 0.5%MAX
VGS = -3.5V
3.5
40 VDS = -5V
30 20
TJ = 150oC
10 TJ = 25oC
TJ =-55oC
0 1
2
3
4
1 0.1
TJ = 25oC
TJ = 150oC
0.01
TJ = -55oC
0.001
0.0001 0.0
5
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
VGS = 0V
10
Figure 6. Source to Drain Diode Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
4000 ID = -8.8A
Ciss
8 CAPACITANCE (pF)
VDD = -10V
6 VDD = -15V
VDD = -20V
4 2
1000 Coss
Crss f = 1MHz VGS = 0V
0 0
5
10
15
20
25
100 0.1
30
1
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain to Source Voltage -4
10 -Ig, GATE LEAKAGE CURRENT(A)
-IAS, AVALANCHE CURRENT(A)
20
10
TJ = 25oC TJ = 125oC
VDS = 0V -5
10
TJ = 125oC -6
10
-7
10
TJ = 25oC -8
10
-9
1 0.01
0.1
1
10
10
30
0
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching Capability
Figure 10. Gate Leakage Current vs Gate to Source Voltage 100
10 8
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
30
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -10V
6 VGS = -4.5V
4 2
100us
10
1ms 10ms
1 THIS AREA IS LIMITED BY rDS(on)
0.1
100ms SINGLE PULSE TJ = MAX RATED
1s 10s DC
o
RTJA = 125 C/W
o
TA = 25oC
RTJA = 50 C/W
0.01 0.1
0 25
50
75
100
125
150
o
TA, AMBIENT TEMPERATURE ( C)
Figure 11. Maximum Continuous Drain Current vs Ambient Temperature
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
1
10
80
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe Operating Area
4
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
1000 VGS = -10 V
SINGLE PULSE o
RTJA = 125 C/W o
TA = 25 C
100
10
1 0.5 -4 10
-3
-2
10
-1
10
10
1
10
100
1000
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation 2
NORMALIZED THERMAL IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5 0.2 0.1 0.05 0.02 0.01
PDM
0.01
t1 t2
SINGLE PULSE
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA
o
RTJA = 125 C/W
0.001 -4 10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
5
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE OF FAIRCHILD’S WORLDWIDE AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the .
2.
A critical component in any component of a life , device, or system whose failure to perform can be reasonably expected to cause the failure of the life device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales . Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS Definition of Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I40
©2009 Fairchild Semiconductor Corporation FDS4435BZ Rev.C1
www.fairchildsemi.com
FDS4435BZ P-Channel PowerTrench® MOSFET
TRADEMARKS The following includes ed and uned trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Auto-SPM™ PowerTrench® F-PFS™ The Power Franchise® PowerXS™ Build it Now™ FRFET® ® SM Global Power Resource Programmable Active Droop™ CorePLUS™ ® Green FPS™ QFET CorePOWER™ TinyBoost™ QS™ Green FPS™ e-Series™ CROSSVOLT™ TinyBuck™ Quiet Series™ Gmax™ CTL™ TinyLogic® RapidConfigure™ GTO™ Current Transfer Logic™ TINYOPTO™ IntelliMAX™ EcoSPARK® TinyPower™ EfficentMax™ ISOPLANAR™ ™ TinyPWM™ Saving our world, 1mW /W /kW at a time™ EZSWITCH™ * MegaBuck™ TinyWire™ ™* SmartMax™ MICROCOUPLER™ TriFault Detect™ SMART START™ MicroFET™ TRUECURRENT™* SPM® MicroPak™ ® PSerDes™ STEALTH™ MillerDrive™ ® Fairchild SuperFET™ MotionMax™ ® Fairchild Semiconductor SuperSOT™-3 Motion-SPM™ FACT Quiet Series™ SuperSOT™-6 UHC® OPTOLOGIC® ® FACT OPTOPLANAR® Ultra FRFET™ SuperSOT™-8 ® ® FAST UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ PDP SPM™ ® FlashWriter * XS™ ®* Power-SPM™ FPS™
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