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BAV99 series High-speed switching diodes
1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1.
Product overview
Type number
Package
Configuration
Package configuration
NXP
JEITA
JEDEC
BAV99
SOT23
-
TO-236AB
dual series
small
BAV99S
SOT363
SC-88
-
quadruple; 2 series
very small
BAV99W
SOT323
SC-70
-
dual series
very small
1.2 Features n High switching speed: trr ≤ 4 ns n Low leakage current n Small SMD plastic packages
n Low capacitance: Cd ≤ 1.5 pF n Reverse voltage: VR ≤ 100 V
1.3 Applications n High-speed switching n General-purpose switching
n Reverse polarity protection
1.4 Quick reference data Table 2. Symbol
Quick reference data Parameter
Conditions
IR
reverse current
VR = 80 V
VR
reverse voltage
Min
Typ
Max
Unit
Per diode
trr [1]
reverse recovery time
[1]
-
-
0.5
µA
-
-
100
V
-
-
4
ns
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAV99 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BAV99; BAV99W 1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 1), anode (diode 2)
3
3
1
2 006aaa144
1
2 006aaa763
BAV99S 1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 3), anode (diode 4)
4
anode (diode 3)
5
cathode (diode 4)
6
cathode (diode 1), anode (diode 2)
6
5
4
1
2
3
6
5
1
2
4
3 006aab101
3. Ordering information Table 4.
Ordering information
Type number
Package Name
Description
Version
BAV99
-
plastic surface-mounted package; 3 leads
SOT23
BAV99S
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAV99W
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking Table 5.
Marking codes
Type number
Marking code[1]
BAV99
A7*
BAV99S
K1*
BAV99W
A7*
[1]
* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
BAV99_SER_5
Product data sheet
2 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol
Parameter
Conditions
Min
Max
Unit
Per diode VRRM
repetitive peak reverse voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current [1]
-
215
mA
[2]
-
125
mA
BAV99S
[1]
-
200
mA
BAV99W
[1]
-
150
mA
BAV99
[2]
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
square wave
130
mA
500
mA
[3]
tp = 1 µs
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
tp = 1 s [1][4]
total power dissipation
Ptot
-
BAV99
Tamb ≤ 25 °C
BAV99S
Tamb ≤ 85 °C
BAV99W
Tamb ≤ 25 °C
[5]
-
250
mW
-
250
mW
-
200
mW
Per device Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Single diode loaded.
[2]
Double diode loaded.
[3]
Tj = 25 °C prior to surge.
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[5]
Soldering points at pins 2, 3, 5 and 6.
BAV99_SER_5
Product data sheet
3 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
6. Thermal characteristics Table 7. Symbol Rth(j-a)
Rth(j-sp)
Thermal characteristics Parameter
Conditions
Min
Typ
Max
Unit
BAV99
-
-
500
K/W
BAV99W
-
-
625
K/W
-
-
360
K/W
-
-
260
K/W
-
-
300
K/W
thermal resistance from junction to ambient
in free air
[1][2]
thermal resistance from junction to solder point BAV99 [3]
BAV99S BAV99W [1]
Single diode loaded.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Soldering points at pins 2, 3, 5 and 6.
7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
Per diode VF
IR
Cd
reverse current
diode capacitance
VR = 80 V
-
-
0.5
µA
VR = 25 V; Tj = 150 °C
-
-
30
µA
VR = 80 V; Tj = 150 °C
-
-
50
µA
f = 1 MHz; VR = 0 V
trr
reverse recovery time
[1]
VFR
forward recovery voltage
[2]
-
-
1.5
pF
-
-
4
ns
-
-
1.75
V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2]
When switched from IF = 10 mA; tr = 20 ns.
BAV99_SER_5
Product data sheet
4 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
3.0 2.8
2.2 1.8
1.1 0.9 6
3
1.1 0.8 5
4
2
3
0.45 0.15
0.45 0.15 2.2 1.35 2.0 1.15
2.5 1.4 2.1 1.2
1
2
1 0.48 0.38
1.9
0.15 0.09
0.25 0.10
0.3 0.2
0.65 1.3
Dimensions in mm
Fig 7.
pin 1 index
Dimensions in mm
04-11-04
Package outline BAV99 (SOT23/TO-236AB)
Fig 8.
06-03-16
Package outline BAV99S (SOT363/SC-88)
2.2 1.8
1.1 0.8 0.45 0.15
3
2.2 1.35 2.0 1.15
1
2 0.4 0.3
0.25 0.10
1.3 Dimensions in mm
Fig 9.
04-11-04
Package outline BAV99W (SOT323/SC-70)
10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number
Package
Description
Packing quantity 3000
10000
BAV99
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
BAV99S
SOT323
4 mm pitch, 8 mm tape and reel
BAV99W
SOT363
-115
-135
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
BAV99_SER_5
Product data sheet
7 of 13
1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages. Table 1.
Product overview
Type number
Package
Configuration
Package configuration
NXP
JEITA
JEDEC
BAV99
SOT23
-
TO-236AB
dual series
small
BAV99S
SOT363
SC-88
-
quadruple; 2 series
very small
BAV99W
SOT323
SC-70
-
dual series
very small
1.2 Features n High switching speed: trr ≤ 4 ns n Low leakage current n Small SMD plastic packages
n Low capacitance: Cd ≤ 1.5 pF n Reverse voltage: VR ≤ 100 V
1.3 Applications n High-speed switching n General-purpose switching
n Reverse polarity protection
1.4 Quick reference data Table 2. Symbol
Quick reference data Parameter
Conditions
IR
reverse current
VR = 80 V
VR
reverse voltage
Min
Typ
Max
Unit
Per diode
trr [1]
reverse recovery time
[1]
-
-
0.5
µA
-
-
100
V
-
-
4
ns
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
BAV99 series
NXP Semiconductors
High-speed switching diodes
2. Pinning information Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BAV99; BAV99W 1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 1), anode (diode 2)
3
3
1
2 006aaa144
1
2 006aaa763
BAV99S 1
anode (diode 1)
2
cathode (diode 2)
3
cathode (diode 3), anode (diode 4)
4
anode (diode 3)
5
cathode (diode 4)
6
cathode (diode 1), anode (diode 2)
6
5
4
1
2
3
6
5
1
2
4
3 006aab101
3. Ordering information Table 4.
Ordering information
Type number
Package Name
Description
Version
BAV99
-
plastic surface-mounted package; 3 leads
SOT23
BAV99S
SC-88
plastic surface-mounted package; 6 leads
SOT363
BAV99W
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking Table 5.
Marking codes
Type number
Marking code[1]
BAV99
A7*
BAV99S
K1*
BAV99W
A7*
[1]
* = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
BAV99_SER_5
Product data sheet
2 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol
Parameter
Conditions
Min
Max
Unit
Per diode VRRM
repetitive peak reverse voltage
-
100
V
VR
reverse voltage
-
100
V
IF
forward current [1]
-
215
mA
[2]
-
125
mA
BAV99S
[1]
-
200
mA
BAV99W
[1]
-
150
mA
BAV99
[2]
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
square wave
130
mA
500
mA
[3]
tp = 1 µs
-
4
A
tp = 1 ms
-
1
A
-
0.5
A
tp = 1 s [1][4]
total power dissipation
Ptot
-
BAV99
Tamb ≤ 25 °C
BAV99S
Tamb ≤ 85 °C
BAV99W
Tamb ≤ 25 °C
[5]
-
250
mW
-
250
mW
-
200
mW
Per device Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C
[1]
Single diode loaded.
[2]
Double diode loaded.
[3]
Tj = 25 °C prior to surge.
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[5]
Soldering points at pins 2, 3, 5 and 6.
BAV99_SER_5
Product data sheet
3 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
6. Thermal characteristics Table 7. Symbol Rth(j-a)
Rth(j-sp)
Thermal characteristics Parameter
Conditions
Min
Typ
Max
Unit
BAV99
-
-
500
K/W
BAV99W
-
-
625
K/W
-
-
360
K/W
-
-
260
K/W
-
-
300
K/W
thermal resistance from junction to ambient
in free air
[1][2]
thermal resistance from junction to solder point BAV99 [3]
BAV99S BAV99W [1]
Single diode loaded.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Soldering points at pins 2, 3, 5 and 6.
7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol
Parameter
Conditions
Min
Typ
Max
Unit
forward voltage
IF = 1 mA
-
-
715
mV
IF = 10 mA
-
-
855
mV
IF = 50 mA
-
-
1
V
IF = 150 mA
-
-
1.25
V
VR = 25 V
-
-
30
nA
Per diode VF
IR
Cd
reverse current
diode capacitance
VR = 80 V
-
-
0.5
µA
VR = 25 V; Tj = 150 °C
-
-
30
µA
VR = 80 V; Tj = 150 °C
-
-
50
µA
f = 1 MHz; VR = 0 V
trr
reverse recovery time
[1]
VFR
forward recovery voltage
[2]
-
-
1.5
pF
-
-
4
ns
-
-
1.75
V
[1]
When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.
[2]
When switched from IF = 10 mA; tr = 20 ns.
BAV99_SER_5
Product data sheet
4 of 13
BAV99 series
NXP Semiconductors
High-speed switching diodes
9. Package outline
3.0 2.8
2.2 1.8
1.1 0.9 6
3
1.1 0.8 5
4
2
3
0.45 0.15
0.45 0.15 2.2 1.35 2.0 1.15
2.5 1.4 2.1 1.2
1
2
1 0.48 0.38
1.9
0.15 0.09
0.25 0.10
0.3 0.2
0.65 1.3
Dimensions in mm
Fig 7.
pin 1 index
Dimensions in mm
04-11-04
Package outline BAV99 (SOT23/TO-236AB)
Fig 8.
06-03-16
Package outline BAV99S (SOT363/SC-88)
2.2 1.8
1.1 0.8 0.45 0.15
3
2.2 1.35 2.0 1.15
1
2 0.4 0.3
0.25 0.10
1.3 Dimensions in mm
Fig 9.
04-11-04
Package outline BAV99W (SOT323/SC-70)
10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number
Package
Description
Packing quantity 3000
10000
BAV99
SOT23
4 mm pitch, 8 mm tape and reel
-215
-235
BAV99S
SOT323
4 mm pitch, 8 mm tape and reel
BAV99W
SOT363
-115
-135
4 mm pitch, 8 mm tape and reel; T1
[2]
-115
-135
4 mm pitch, 8 mm tape and reel; T2
[3]
-125
-165
[1]
For further information and the availability of packing methods, see Section 14.
[2]
T1: normal taping
[3]
T2: reverse taping
BAV99_SER_5
Product data sheet
7 of 13
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