Bs170 Datasheet rf4x

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR

Features · · · ·

High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown

E

A B

· ·

Min

Max

A

4.45

4.70

B

4.46

4.70

C

12.7

—

D

0.41

0.63

E

3.43

3.68

G

2.42

2.67

H

1.14

1.40

C

Mechanical Data · ·

TO-92 Dim

Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.)

Maximum Ratings

D SG D

BOTTOM VIEW

All Dimensions in mm

H

G

H

@ TA = 25°C unless otherwise specified Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Drain-Gate Voltage

VDGS

60

V

Gate-Source-Voltage (pulsed)

VGS

±20

V

Drain Current (continuous)

ID

300

mA

Power Dissipation @TC = 25°C (Note 1)

Pd

830

mW

Tj

150

°C

Tj, TSTG

-55 to +150

°C

Symbol

Value

Unit

Maximum Forward Current (continuous)

IF

0.50

A

Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.5A, Tj = 25°C

VF

0.85

V

Junction Temperature Operating and Storage Temperature Range

Inverse Diode

@ TA = 25°C unless otherwise specified Characteristic

Electrical Characteristics

@ TA = 25°C unless otherwise specified

Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage

Symbol

Min

Typ

Max

Unit

V(BR)DSS

60

90

—

V

Test Condition

VGS(th)

0.8

1.0

3.0

V

VGS = VDS, ID = 1.0mA

ID = 100µA, VGS = 0

Gate-Body Leakage Current

IGSS

—

—

10

nA

VGS = 15V, VDS = 0

Drain-Cutoff Current

IDSS

—

—

0.5

µA

VDS = 25V, VGS = 0

rDS (ON)

—

3.5

5.0

W

VGS = 10V, ID = 0.2mA

RqJA

—

—

150

K/W

Forward Transconductance

gFS

—

200

—

mm

VDS = 10V, ID = 0.2A, f = 1MHz

Input Capacitance

Ciss

—

60

—

pF

VDS = 10V, VGS = 0, f =1.0MHz

Turn On Time Turn Off Time

ton toff

—

5.0 15

—

ns

VGS = 10V, VDS = 10V, RD = 100W

Drain-Source ON Resistance Thermal Resistance, Junction to Ambient Air

Notes:

Note 1

1. Valid provided that leads are kept at ambient temperature at a distance of 2.0mm from case.

DS21802 Rev. D-3

1 of 2

BS170

0.8

ID (ON), DRAIN SOURCE ON CURRENT (A)

Pd, POWER DISSIPATION (W)

1

(See Note 1)

0.6

0.4

0.2

1

7V

0.8

VGS = 6V

0.6

Pulse test width 80µs; pulse duty factor 1% 5V

0.4

4V

0.2

3V

0.1

0 0

100

0

200

40

60

1.0

TA = 25°C

0.8 Pulse test width 80µs; pulse duty factor 1% 4.5V

200

4.0V

3.5V

100

100

TA = 25°C

400

300

80

VDS = 10V

VGS = 5V

ID, DRAIN CURRENT (A)

ID (ON), DRAIN SOURCE ON-CURRENT (mA)

500

20

VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics

TA, AMBIENT TEMPERATURE (ºC) Fig. 1. Power Derating Curve

Pulse test width 80µs; pulse duty factor 1%

0.6

0.4

0.2

3.0V

0

0

2

0

4

6

8

0

10

gf s, FORWARD TRANSCONDUCTANCE (mm)

500 VDS = 10V Pulse test width 80µs; pulse duty factor 1%

400

2

4

6

10

8

VGS, GATE-SOURCE VOLTAGE (V) Fig. 4. Drain Current vs Gate-Source Voltage

VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 3. Saturation Characteristics

gfs, FORWARD TRANSCONDUCTANCE (mm)

TA = 25°C

300

200

100

0

500

VDS = 10V

400

Pulse test width 80µs; pulse duty factor 1%

300

200

100

0

0

2

4

6

8

0

10

VGS, GATE-SOURCE VOLTAGE (V) Fig. 5. Transconductance vs Gate-Source Voltage

DS21802 Rev. D-3

100

200

300

400

500

ID, DRAIN CURRENT (mA) Fig. 6 Transconductance vs. Drain Current

2 of 2

BS170

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