Bu2520af 42452f
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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA SYMBOL
PARAMETER
CONDITIONS
VCESM VCEO IC ICM Ptot VCEsat ICsat tf
Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time
VBE = 0 V
PINNING - SOT199 PIN
TYP.
MAX.
UNIT
6.0 0.2
1500 800 10 25 45 5.0 0.35
V V A A W V A µs
Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.85 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
c case
b 1
2
e
3
LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL
PARAMETER
CONDITIONS
VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj
Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature
VBE = 0 V
average over any 20 ms period Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65 -
1500 800 10 25 6 9 150 6 45 150 150
V V A A A A mA A W ˚C ˚C
TYP.
MAX.
UNIT
THERMAL RESISTANCES SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
September 1997
1
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all three terminals to external heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0 2.0
mA mA
7.5 800
13.5 -
1.0 -
mA V V
5
13 7
5.0 1.1 9.5
V V
STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS 2
ICES ICES
Collector cut-off current
IEBO BVEBO VCEOsust
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage
VCEsat VBEsat hFE hFE
Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 100 mA; VCE = 5 V IC = 6 A; VCE = 5 V
DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (32 kHz line deflection circuit)
ICsat = 6.0 A; LC = 330 µH; Cfb = 9 nF; IB(end) = 0.85 A; LB = 3.45 µH; -VBB = 4 V; (-dIB/dt = 1.2 A / µs)
3.0 0.2
4.0 0.35
µs µs
4.5 0.35
5.5 0.5
µs µs
ts tf
Turn-off storage time Turn-off fall time Switching times (16 kHz line deflection circuit)
ts tf
ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs)
Turn-off storage time Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
ICsat
TRANSISTOR
+ 50v IC
100-200R
DIODE t
IBend
IB
Horizontal t
Oscilloscope
10us
13us
Vertical 32us
1R
100R
VCE
6V 30-60 Hz t
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms (32 kHz).
IC / mA
ICsat 90 % IC
250 10 %
200
tf
t
ts IB IBend
100
t 0 VCE / V
min VCEOsust
- IBM
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR IC
Fig.5. Switching times definitions.
ICsat
+ 150 v nominal adjust for ICsat
DIODE t
Lc IBend
IB
t 20us
26us
IBend 64us VCE
LB
T.U.T. Cfb
-VBB t
Fig.6. Switching times test circuit.
Fig.3. Switching times waveforms (16 kHz).
September 1997
3
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
100
BU2520AF
hFE
VBESAT / V
1.2
Tj = 25 C
Tj = 25 C
5V
Tj = 125 C
1.1
Tj = 125 C
1 0.9
10 1V
IC= 0.8
8A 6A 5A 4A
0.7
1
0.6
0.1
10
1
0
100
1
2 IB / A
IC / A
Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE
1.2
4
Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VBESAT / V
1.1
3
VCESAT / V
10
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1 0.9
8A
0.8
1 6A
IC/IB=
0.7
5A
3
0.6
4
0.5
IC = 4 A
5
0.4
0.1
0.1
1 IC / A
10
0.1
Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
1
1 IB / A
10
Fig.11. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
VCESAT / V
1000
Eoff / uJ
IC/IB =
0.9
5
0.8
IC = 6 A
4
0.7
32 kHz
3
0.6
16 kHz
5A 100
0.5 Tj = 25 C
0.4
Tj = 125 C
0.3 0.2 0.1 10
0 0.1
10
1
0.1
100
IC / A
Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
September 1997
1 IB / A
10
Fig.12. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; parameter frequency
4
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
12 11 10 9 8 7 6 5 4 3 2 1 0
BU2520AF
ts, tf / us
100 90 80 70 60
IC =
50
6A
40 30
5A
20
tf
10 0
0.1
1 IB / A
0
10
20
40
60
80 Ths / C
100
120
140
Fig.15. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths)
Fig.13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
12 11 10 9 8 7 6 5 4 3 2 1 0
with heatsink compound
110
ts
16 kHz
Normalised Power Derating
PD%
120
ts, tf / us
10
Zth / (K/W)
32 kHz 1
ts 0.1
6A
0.1
1 IB / A
PD
0.01
tf
D=0 0.001 1E-06
10
Fig.14. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
September 1997
0.2 0.1 0.05 0.02
IC =
5A
0.5
tp
D=
t
T
1E-04
1E-02 t/s
tp T
1E+00
Fig.16. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
5
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
IC / A
BU2520AF
BU2520AF
100 tp = ICM
= 0.01 30 us
ICDC 10 100 us
Ptot 1
1 ms
0.1 10 ms DC
0.01 1
10
100
1000
VCE / V
Fig.17. Forward bias safe operating area. Ths = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound.
September 1997
6
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
MECHANICAL DATA Dimensions in mm
15.3 max
Net Mass: 5.5 g
5.2 max
3.1 3.3
0.7 7.3
3.2 o 45
6.2 5.8 21.5 max
seating plane
3.5 max not tinned
3.5
15.7 min 1
2
2.1 max
5.45
3 1.2 1.0
0.7 max 0.4 M
2.0
5.45
Fig.18. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
7
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification
This data sheet contains final product specifications.
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE APPLICATIONS These products are not designed for use in life appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
8
Rev 1.500
This datasheet has been from: www.datasheetcatalog.com Datasheets for electronics components.
Product specification
Silicon Diffused Power Transistor
BU2520AF
GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.
QUICK REFERENCE DATA SYMBOL
PARAMETER
CONDITIONS
VCESM VCEO IC ICM Ptot VCEsat ICsat tf
Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time
VBE = 0 V
PINNING - SOT199 PIN
TYP.
MAX.
UNIT
6.0 0.2
1500 800 10 25 45 5.0 0.35
V V A A W V A µs
Ths ≤ 25 ˚C IC = 6.0 A; IB = 1.2 A ICsat = 6.0 A; IB(end) = 0.85 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
c case
b 1
2
e
3
LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL
PARAMETER
CONDITIONS
VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj
Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature
VBE = 0 V
average over any 20 ms period Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-65 -
1500 800 10 25 6 9 150 6 45 150 150
V V A A A A mA A W ˚C ˚C
TYP.
MAX.
UNIT
THERMAL RESISTANCES SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
Rth j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
Rth j-a
Junction to ambient
in free air
35
-
K/W
1 Turn-off current.
September 1997
1
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
Visol
Repetitive peak voltage from all three terminals to external heatsink
R.H. ≤ 65 % ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
22
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0 2.0
mA mA
7.5 800
13.5 -
1.0 -
mA V V
5
13 7
5.0 1.1 9.5
V V
STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS 2
ICES ICES
Collector cut-off current
IEBO BVEBO VCEOsust
Emitter cut-off current Emitter-base breakdown voltage Collector-emitter sustaining voltage
VCEsat VBEsat hFE hFE
Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain
VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 7.5 V; IC = 0 A IB = 1 mA IB = 0 A; IC = 100 mA; L = 25 mH IC = 6.0 A; IB = 1.2 A IC = 6.0 A; IB = 1.2 A IC = 100 mA; VCE = 5 V IC = 6 A; VCE = 5 V
DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Cc
Collector capacitance
IE = 0 A; VCB = 10 V; f = 1 MHz
115
-
pF
Switching times (32 kHz line deflection circuit)
ICsat = 6.0 A; LC = 330 µH; Cfb = 9 nF; IB(end) = 0.85 A; LB = 3.45 µH; -VBB = 4 V; (-dIB/dt = 1.2 A / µs)
3.0 0.2
4.0 0.35
µs µs
4.5 0.35
5.5 0.5
µs µs
ts tf
Turn-off storage time Turn-off fall time Switching times (16 kHz line deflection circuit)
ts tf
ICsat = 6.0 A; LC = 650 µH; Cfb = 19 nF; IB(end) = 1.0 A; LB = 5.3 µH; -VBB = 4 V; (-dIB/dt = 0.8 A / µs)
Turn-off storage time Turn-off fall time
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
ICsat
TRANSISTOR
+ 50v IC
100-200R
DIODE t
IBend
IB
Horizontal t
Oscilloscope
10us
13us
Vertical 32us
1R
100R
VCE
6V 30-60 Hz t
Fig.1. Test circuit for VCEOsust.
Fig.4. Switching times waveforms (32 kHz).
IC / mA
ICsat 90 % IC
250 10 %
200
tf
t
ts IB IBend
100
t 0 VCE / V
min VCEOsust
- IBM
Fig.2. Oscilloscope display for VCEOsust.
TRANSISTOR IC
Fig.5. Switching times definitions.
ICsat
+ 150 v nominal adjust for ICsat
DIODE t
Lc IBend
IB
t 20us
26us
IBend 64us VCE
LB
T.U.T. Cfb
-VBB t
Fig.6. Switching times test circuit.
Fig.3. Switching times waveforms (16 kHz).
September 1997
3
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
100
BU2520AF
hFE
VBESAT / V
1.2
Tj = 25 C
Tj = 25 C
5V
Tj = 125 C
1.1
Tj = 125 C
1 0.9
10 1V
IC= 0.8
8A 6A 5A 4A
0.7
1
0.6
0.1
10
1
0
100
1
2 IB / A
IC / A
Fig.7. Typical DC current gain. hFE = f (IC) parameter VCE
1.2
4
Fig.10. Typical base-emitter saturation voltage. VBEsat = f (IB); parameter IC
VBESAT / V
1.1
3
VCESAT / V
10
Tj = 25 C
Tj = 25 C
Tj = 125 C
Tj = 125 C
1 0.9
8A
0.8
1 6A
IC/IB=
0.7
5A
3
0.6
4
0.5
IC = 4 A
5
0.4
0.1
0.1
1 IC / A
10
0.1
Fig.8. Typical base-emitter saturation voltage. VBEsat = f (IC); parameter IC/IB
1
1 IB / A
10
Fig.11. Typical collector-emitter saturation voltage. VCEsat = f (IB); parameter IC
VCESAT / V
1000
Eoff / uJ
IC/IB =
0.9
5
0.8
IC = 6 A
4
0.7
32 kHz
3
0.6
16 kHz
5A 100
0.5 Tj = 25 C
0.4
Tj = 125 C
0.3 0.2 0.1 10
0 0.1
10
1
0.1
100
IC / A
Fig.9. Typical collector-emitter saturation voltage. VCEsat = f (IC); parameter IC/IB
September 1997
1 IB / A
10
Fig.12. Typical turn-off losses. Tj = 85˚C Eoff = f (IB); parameter IC; parameter frequency
4
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
12 11 10 9 8 7 6 5 4 3 2 1 0
BU2520AF
ts, tf / us
100 90 80 70 60
IC =
50
6A
40 30
5A
20
tf
10 0
0.1
1 IB / A
0
10
20
40
60
80 Ths / C
100
120
140
Fig.15. Normalised power dissipation. PD% = 100⋅PD/PD 25˚C = f (Ths)
Fig.13. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 16 kHz
12 11 10 9 8 7 6 5 4 3 2 1 0
with heatsink compound
110
ts
16 kHz
Normalised Power Derating
PD%
120
ts, tf / us
10
Zth / (K/W)
32 kHz 1
ts 0.1
6A
0.1
1 IB / A
PD
0.01
tf
D=0 0.001 1E-06
10
Fig.14. Typical collector storage and fall time. ts = f (IB); tf = f (IB); parameter IC; Tj = 85˚C; f = 32 kHz
September 1997
0.2 0.1 0.05 0.02
IC =
5A
0.5
tp
D=
t
T
1E-04
1E-02 t/s
tp T
1E+00
Fig.16. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T
5
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
IC / A
BU2520AF
BU2520AF
100 tp = ICM
= 0.01 30 us
ICDC 10 100 us
Ptot 1
1 ms
0.1 10 ms DC
0.01 1
10
100
1000
VCE / V
Fig.17. Forward bias safe operating area. Ths = 25 ˚C ICDC & ICM = f(VCE); ICM single pulse; parameter tp Second-breakdown limits independant of temperature. Mounted with heatsink compound.
September 1997
6
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
MECHANICAL DATA Dimensions in mm
15.3 max
Net Mass: 5.5 g
5.2 max
3.1 3.3
0.7 7.3
3.2 o 45
6.2 5.8 21.5 max
seating plane
3.5 max not tinned
3.5
15.7 min 1
2
2.1 max
5.45
3 1.2 1.0
0.7 max 0.4 M
2.0
5.45
Fig.18. SOT199; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1997
7
Rev 1.500
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2520AF
DEFINITIONS Data sheet status Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification
This data sheet contains final product specifications.
Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE APPLICATIONS These products are not designed for use in life appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1997
8
Rev 1.500
This datasheet has been from: www.datasheetcatalog.com Datasheets for electronics components.
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